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  • TPS1101D

  • Manufacturer : Texas Instruments
    Packaging : Tube
    Alternate Packaging
    Part Status : Active
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 15V
    Current - Continuous Drain (Id) @ 25°C : 2.3A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 2.7V, 10V
    Rds On (Max) @ Id, Vgs : 90 mOhm @ 2.5A, 10V
    Vgs(th) (Max) @ Id : 1.5V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 11.25nC @ 10V
    Vgs (Max) : +2V, -15V
    Power Dissipation (Max) : 791mW (Ta)
    Operating Temperature : -40°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 8-SOIC
    Package / Case : 8-SOIC (0.154", 3.90mm Width)

極速報價

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