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羅斌森

  • KSD2012GTU

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Active
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 3A
    Voltage - Collector Emitter Breakdown (Max) : 60V
    Vce Saturation (Max) @ Ib, Ic : 1V @ 200mA, 2A
    Current - Collector Cutoff (Max) : 100μA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 150 @ 500mA, 5V
    Power - Max : 25W
    Frequency - Transition : 3MHz
    Operating Temperature : 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-220-3 Full Pack
    Supplier Device Package : TO-220F

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