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產(chǎn)品系列

羅斌森

  • HGTD1N120BNS9A

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    IGBT Type : NPT
    Voltage - Collector Emitter Breakdown (Max) : 1200V
    Current - Collector (Ic) (Max) : 5.3A
    Current - Collector Pulsed (Icm) : 6A
    Vce(on) (Max) @ Vge, Ic : 2.9V @ 15V, 1A
    Power - Max : 60W
    Switching Energy : 70μJ (on), 90μJ (off)
    Input Type : Standard
    Gate Charge : 14nC
    Td (on/off) @ 25°C : 15ns/67ns
    Test Condition : 960V, 1A, 82 Ohm, 15V
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
    Supplier Device Package : TO-252AA

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