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羅斌森

  • IMD10AMT1G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
    Current - Collector (Ic) (Max) : 500mA
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Resistor - Base (R1) : 13 kOhms, 130 Ohms
    Resistor - Emitter Base (R2) : 10 kOhms
    DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V / 68 @ 100mA, 5V
    Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
    Current - Collector Cutoff (Max) : 500nA
    Power - Max : 285mW
    Package / Case : SOT-23-6 Thin, TSOT-23-6
    Supplier Device Package : SC-74R

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