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羅斌森

  • MJ11032G

  • Manufacturer : ON Semiconductor
    Packaging : Tray
    Part Status : Active
    Transistor Type : NPN - Darlington
    Current - Collector (Ic) (Max) : 50A
    Voltage - Collector Emitter Breakdown (Max) : 120V
    Vce Saturation (Max) @ Ib, Ic : 3.5V @ 500mA, 50A
    Current - Collector Cutoff (Max) : 2mA
    DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 25A, 5V
    Power - Max : 300W
    Operating Temperature : -55°C ~ 200°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-204AE
    Supplier Device Package : TO-3

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