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羅斌森
羅斌森

  • NSVBC858CLT1G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    Transistor Type : PNP
    Current - Collector (Ic) (Max) : 100mA
    Voltage - Collector Emitter Breakdown (Max) : 30V
    Vce Saturation (Max) @ Ib, Ic : 650mV @ 5mA, 100mA
    Current - Collector Cutoff (Max) : 15nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 420 @ 2mA, 5V
    Power - Max : 300mW
    Frequency - Transition : 100MHz
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : TO-236-3, SC-59, SOT-23-3
    Supplier Device Package : SOT-23

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