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產(chǎn)品系列

羅斌森

  • NTS2101PT1G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 8V
    Current - Continuous Drain (Id) @ 25°C : 1.4A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
    Rds On (Max) @ Id, Vgs : 100 mOhm @ 1A, 4.5V
    Vgs(th) (Max) @ Id : 700mV @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 6.4nC @ 5V
    Vgs (Max) : ±8V
    Input Capacitance (Ciss) (Max) @ Vds : 640pF @ 8V
    Power Dissipation (Max) : 290mW (Ta)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : SC-70-3 (SOT323)
    Package / Case : SC-70, SOT-323

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