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羅斌森

  • NSS12501UW3T2G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 5A
    Voltage - Collector Emitter Breakdown (Max) : 12V
    Vce Saturation (Max) @ Ib, Ic : 120mV @ 400mA, 4A
    Current - Collector Cutoff (Max) : 100nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2A, 2V
    Power - Max : 875mW
    Frequency - Transition : 150MHz
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : 3-WDFN Exposed Pad
    Supplier Device Package : 3-WDFN (2x2)

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