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產(chǎn)品系列

羅斌森

  • CSD86336Q3DT

  • Manufacturer : Texas Instruments
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Series : NexFET?
    Part Status : Active
    FET Type : 2 N-Channel (Half Bridge)
    FET Feature : Logic Level Gate, 5V Drive
    Drain to Source Voltage (Vdss) : 25V
    Current - Continuous Drain (Id) @ 25°C : 20A (Ta)
    Rds On (Max) @ Id, Vgs : 9.1 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V
    Vgs(th) (Max) @ Id : 1.9V @ 250μA, 1.6V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 3.8nC @ 45V, 7.4nC @ 45V
    Input Capacitance (Ciss) (Max) @ Vds : 494pF @ 12.5V, 970pF @ 12.5V
    Power - Max : 6W
    Operating Temperature : -55°C ~ 125°C
    Mounting Type : Surface Mount
    Package / Case : 8-PowerTDFN
    Supplier Device Package : 8-VSON (3.3x3.3)

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